Fermionics Opto-Technology offers high speed InGaAs photodiodes for high speed analog and digital communications systems, LANs, FDDI, instrumentation, and sensing applications. All of the devices listed are fabricated with planar-passivated technology; photosensitive surfaces are broadband AR-coated.
Very high speed, low capacitance, low dark current photodiode for very high bit rate receiver applications. The photosensitive area is 50 µm in diameter. Planar-passivated device structure.
FD50 Chip Series Spec SheetAbsolute Maximum Ratings
| Parameter | Ratings | Units |
|---|---|---|
| Storage Temperature | -40 to +100 | °C |
| Operating Temperature | -40 to +85 | °C |
| Forward Current | 5 | mA |
| Reverse Current | 0.5 | mA |
| Reverse Voltage | 30 | V |
Optical and Electrical Characteristics (T = 25°C)
| Parameter | Test Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|
| Responsivity (R) |
λ = 1300 nm λ = 1550 nm |
0.80 0.85 |
0.85 0.90 |
A/W | |
| Dark Current (Id) |
Vr = 5V | 0.1 | 1 | nA | |
| Rise / Fall Time (Tr / Tf) |
Vr = 5V | 100 | 200 | ps | |
| Capacitance (C) |
Vr = 5V | 0.25 | 0.4 | pF |
Package Options
| Part Number | Part Description | ||
|---|---|---|---|
| FD50W | 50 µm active diameter InGaAs photodiode mounted in TO18 header with flat AR coated window | 
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| FD50L | 50 µm active diameter InGaAs photodiode mounted in TO46 header with ball lens | 
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| FD50S2 | 50 µm active diameter InGaAs photodiode mounted on type S2 alumina ceramic submount | 
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| FD50S3 | 50 µm active diameter InGaAs photodiode mounted on type S3 alumina ceramic submount | 
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| FD50S8-F-(Fiber Type/Connector) | 50 µm active diameter InGaAs photodiode on horizontal-mount S8 ceramic package pigtail assembly. Custom fiber and connector terminations available. | 
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| FD50S8-F8-(Fiber Type/Connector) | 50 µm active diameter InGaAs photodiode on horizontal-mount S8 ceramic package pigtail assembly. Internal fiber tip angle polished at 8° for low back reflection. Custom singlemode fiber and connector terminations available. |
High-speed, low dark current, low capacitance photodiode for high speed communication systems. The photosensitive area is 80 µm in diameter. Planar-passivated device structure.
FD80 Chip Series Spec SheetAbsolute Maximum Ratings
| Parameter | Ratings | Units |
|---|---|---|
| Storage Temperature | -40 to +100 | °C |
| Operating Temperature | -40 to +85 | °C |
| Forward Current | 5 | mA |
| Reverse Current | 0.5 | mA |
| Reverse Voltage | 30 | V |
Optical and Electrical Characteristics (T = 25°C)
| Parameter | Test Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|
| Responsivity (R) |
λ = 1300 nm λ = 1550 nm |
0.80 0.85 |
0.85 0.90 |
A/W | |
| Dark Current (Id) |
Vr = 5V | 0.1 | 1 | nA | |
| Rise / Fall Time (Tr / Tf) |
Vr = 5V | 0.15 | 0.5 | ns | |
| Capacitance (C) |
Vr = 5V | 0.4 | 0.75 | pF |
Package Options
| Part Number | Part Description | ||
|---|---|---|---|
| FD80W | 80 µm active diameter InGaAs photodiode mounted in TO18 header with flat AR coated window |
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| FD80L | 80 µm active diameter InGaAs photodiode mounted in TO46 header with ball lens |
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| FD80S2 | 80 µm active diameter InGaAs photodiode mounted on type S2 alumina ceramic submount |
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| FD80S3 | 80 µm active diameter InGaAs photodiode mounted on type S3 alumina ceramic submount |
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| FD80FC | 80 µm active diameter InGaAs photodiode in TO46 header with focusing lens, aligned in FC-connector receptacle with 2-hole flange | 
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| FD80FCB | 80 µm active diameter InGaAs photodiode in TO46 header with focusing lens, aligned in PCB/panel mount FC-connector receptacle | 
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| FD80SC | 80 µm active diameter InGaAs photodiode in TO46 header with focusing lens, aligned in PCB/panel style SC-connector receptacle | 
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| FD80ST | 80 µm active diameter InGaAs photodiode in TO46 header with focusing lens, aligned in Radiall ST receptacle | 
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| FD80S8-F-(Fiber Type/Connector) | 80 µm active diameter InGaAs photodiode on horizontal-mount S8 ceramic package pigtail assembly. Custom fiber and connector terminations available. |
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| FD80S8-F8-(Fiber Type/Connector) | 80 µm active diameter InGaAs photodiode on horizontal-mount S8 ceramic package pigtail assembly. Internal fiber tip angle polished at 8° for low back reflection. Custom singlemode fiber and connector terminations available. | 
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| FD80F-(Fiber Type/Connector) | 80 µm active diameter InGaAs photodiode in TO46 axial package pigtail assembly. Custom fiber and connector terminations available. | 
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| FD80F8-(Fiber Type/Connector) | 80 µm active diameter InGaAs photodiode in TO46 axial package pigtail assembly. Internal fiber tip angle polished at 8° for low back reflection. Custom singlemode fiber and connector terminations available. |
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High speed, low capacitance, low dark current photodiode for high speed communications systems, LANs, and FDDI applications. The photosensitive area is 100 µm in diameter. Planar-passivated device structure.
FD100 Chip Series Spec SheetAbsolute Maximum Ratings
| Parameter | Ratings | Units |
|---|---|---|
| Storage Temperature | -40 to +100 | °C |
| Operating Temperature | -40 to +85 | °C |
| Forward Current | 5 | mA |
| Reverse Current | 0.5 | mA |
| Reverse Voltage | 30 | V |
Optical and Electrical Characteristics (T = 25°C)
| Parameter | Test Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|
| Responsivity (R) |
λ = 1300 nm λ = 1550 nm |
0.80 0.85 |
0.90 0.95 |
A/W | |
| Dark Current (Id) |
Vr = 5V | 0.5 | 3 | nA | |
| Rise / Fall Time (Tr / Tf) |
Vr = 5V | 0.3 | 0.7 | ns | |
| Capacitance (C) |
Vr = 5V | 1.1 | 1.5 | pF |
Package Options
| Part Number | Part Description | ||
|---|---|---|---|
| FD100W | 100 µm active diameter InGaAs photodiode mounted in TO18 header with flat AR coated window |
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| FD100L | 100 µm active diameter InGaAs photodiode mounted in TO46 header with ball lens |
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| FD100S2 | 100 µm active diameter InGaAs photodiode mounted on type S2 alumina ceramic submount |
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| FD100S3 | 100 µm active diameter InGaAs photodiode mounted on type S3 alumina ceramic submount |
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| FD100FC | 100 µm active diameter InGaAs photodiode in TO46 header with focusing lens, aligned in FC-connector receptacle with 2-hole flange |
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| FD100FCB | 100 µm active diameter InGaAs photodiode in TO46 header with focusing lens, aligned in PCB/panel mount FC-connector receptacle |
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| FD100SC | 100 µm active diameter InGaAs photodiode in TO46 header with focusing lens, aligned in PCB/panel style SC-connector receptacle |
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| FD100ST | 100 µm active diameter InGaAs photodiode in TO46 header with focusing lens, aligned in Radiall ST receptacle |
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| FD100F-(Fiber Type/Connector) | 100 µm active diameter InGaAs photodiode in TO46 axial package pigtail assembly. Custom fiber and connector terminations available. |
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| FD100F8-(Fiber Type/Connector) | 100 µm active diameter InGaAs photodiode in TO46 axial package pigtail assembly. Internal fiber tip angle polished at 8° for low back reflection. Custom singlemode fiber and connector terminations available. |
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High speed, low capacitance, low dark current photodiode for high speed communications systems. The photosensitive area is 150 µm in diameter. Planar-passivated device structure.
FD150 Chip Series Spec SheetAbsolute Maximum Ratings
| Parameter | Ratings | Units |
|---|---|---|
| Storage Temperature | -40 to +100 | °C |
| Operating Temperature | -40 to +85 | °C |
| Forward Current | 5 | mA |
| Reverse Current | 1 | mA |
| Reverse Voltage | 25 | V |
Optical and Electrical Characteristics (T = 25°C)
| Parameter | Test Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|
| Responsivity (R) |
λ = 1300 nm λ = 1550 nm |
0.80 0.85 |
0.90 0.95 |
A/W | |
| Dark Current (Id) |
Vr = 5V | 0.5 | 3 | nA | |
| Rise / Fall Time (Tr / Tf) |
Vr = 5V | 0.3 | 1 | ns | |
| Capacitance (C) |
Vr = 5V | 1.5 | 2 | pF |
Package Options
| Part Number | Part Description | ||
|---|---|---|---|
| FD150W | 150 µm active diameter InGaAs photodiode mounted in TO18 header with flat AR coated window |
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| FD150L | 150 µm active diameter InGaAs photodiode mounted in TO46 header with ball lens |
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| FD150S2 | 150 µm active diameter InGaAs photodiode mounted on type S2 alumina ceramic submount |
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| FD150S3 | 150 µm active diameter InGaAs photodiode mounted on type S3 alumina ceramic submount |
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| FD150FC | 150 µm active diameter InGaAs photodiode in TO46 header with focusing lens, aligned in FC-connector receptacle with 2-hole flange |
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| FD150FCB | 150 µm active diameter InGaAs photodiode in TO46 header with focusing lens, aligned in PCB/panel mount FC-connector receptacle |
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| FD150SC | 150 µm active diameter InGaAs photodiode in TO46 header with focusing lens, aligned in PCB/panel style SC-connector receptacle |
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| FD150ST | 150 µm active diameter InGaAs photodiode in TO46 header with focusing lens, aligned in Radiall ST receptacle |
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| FD150S8-F-(Fiber Type/Connector) | 150 µm active diameter InGaAs photodiode on horizontal-mount S8 ceramic package pigtail assembly. Custom fiber and connector terminations available. |
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| FD150S8-F8-(Fiber Type/Connector) | 150 µm active diameter InGaAs photodiode on horizontal-mount S8 ceramic package pigtail assembly. Internal fiber tip angle polished at 8° for low back reflection. Custom singlemode fiber and connector terminations available. |
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| FD150F-(Fiber Type/Connector) | 150 µm active diameter InGaAs photodiode in TO46 axial package pigtail assembly. Custom fiber and connector terminations available. |
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| FD150F8-(Fiber Type/Connector) | 150 µm active diameter InGaAs photodiode in TO46 axial package pigtail assembly. Internal fiber tip angle polished at 8° for low back reflection. Custom singlemode fiber and connector terminations available. |
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General purpose InGaAs PIN photodiode useful for a wide range of applications including infrared instrumentation and moderate speed communications systems. The photosensitive area is 300 µm in diameter.
FD300 Chip Series Spec SheetAbsolute Maximum Ratings
| Parameter | Ratings | Units |
|---|---|---|
| Storage Temperature | -40 to +100 | °C |
| Operating Temperature | -40 to +85 | °C |
| Forward Current | 25 | mA |
| Reverse Current | 5 | mA |
| Reverse Voltage | 20 | V |
Optical and Electrical Characteristics (T = 25°C)
| Parameter | Test Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|
| Responsivity (R) |
λ = 1300 nm λ = 1550 nm |
0.80 0.85 |
0.90 0.95 |
A/W | |
| Dark Current (Id) |
Vr = 5V | 1 | 5 | nA | |
| Rise / Fall Time (Tr / Tf) |
Vr = 5V | 0.4 | 1.5 | ns | |
| Capacitance (C) |
Vr = 5V | 4 | 7 | pF |
Package Options
| Part Number | Part Description | ||
|---|---|---|---|
| FD300W | 300 µm active diameter InGaAs photodiode mounted in TO18 header with flat AR coated window |
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| FD300L | 300 µm active diameter InGaAs photodiode mounted in TO46 header with ball lens |
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| FD300DL | 300 µm active diameter InGaAs photodiode mounted in TO46 header with dome lens | 
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| FD300S2 | 300 µm active diameter InGaAs photodiode mounted on type S2 alumina ceramic submount |
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| FD300S3 | 300 µm active diameter InGaAs photodiode mounted on type S3 alumina ceramic submount |
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| FD300FC | 300 µm active diameter InGaAs photodiode in TO46 header with focusing lens, aligned in FC-connector receptacle with 2-hole flange |
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| FD300FCB | 300 µm active diameter InGaAs photodiode in TO46 header with focusing lens, aligned in PCB/panel mount FC-connector receptacle |
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| FD300SC | 300 µm active diameter InGaAs photodiode in TO46 header with focusing lens, aligned in PCB/panel style SC-connector receptacle |
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| FD300ST | 300 µm active diameter InGaAs photodiode in TO46 header with focusing lens, aligned in Radiall ST receptacle |
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| FD300-OP15AR | 300 µm active diameter InGaAs photodiode mounted in TO46 header with AR-coated dome lens (1550 nm) |
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| FD300F-(Fiber Type/Connector) | 300 µm active diameter InGaAs photodiode in TO46 axial package pigtail assembly. Custom fiber and connector terminations available. |
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| FD300F8-(Fiber Type/Connector) | 300 µm active diameter InGaAs photodiode in TO46 axial package pigtail assembly. Internal fiber tip angle polished at 8° for low back reflection. Custom singlemode fiber and connector terminations available. |
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