InGaAs Linear Arrays

Fermionics Opto-Technology's linear array is optimized for spectroscopic applications in the 1000 nm to 1650 nm wavelength range. The photosensitive element size is 500 µm x 25 µm, spaced on a 50 µm pitch. Access to anode bond pads is in an alternating lefthand/righthand pattern; the bottom surface is the common cathode. Photosensitive areas are anti-reflection coated. The InGaAs Linear array chip is available in lengths of 128 pixels and 256 pixels, and is compatible with available Silicon multiplexers.

Linear Array Typical Characteristics (VR=5 V, T=25°C)

Parameter Typical Maximum
Dark Current 2 nA 50 nA
Capacitance 2 pF -
Failed Elements <1% 4%
Array Length 128 pixels, 256 pixels, custom

Dimensional Layout of InGaAs Linear Array Chip

 


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