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HgCdTe epitaxial layers are grown using LPE on ZnCdTe or CdTe substrates. The spectral sensitivity of these layers can e tuned easily by adjusting the composition of LPE growth solutions. The as-grown layers are p-type as a result of Hg vacancies and can be annealed to detector grade low carrier concentration p-type or n-type materials. These layers can also be doped p-type or n-type by adding impurities during growth.
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HgCdTe epilayers are detector grade materials suitable to be used for both photoconductive and photovoltaic mode of operations. For photoconductive applications, n-type epilayers are used. For photovoltaic applications, the customer can produce diodes arrays with the n+-type junction in p-type epilayers and the p+-type junction in n-type epilayers.
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Square cut up to 2.0 x 2.0 cm² and random sizes.
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