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HgCdTe p-on-n heterostructure epitaxial layers are grown using LPE in a multilayer growth mode on CdTe substrates. The spectral sensitivity of these layers is determined by the active n-type layer and can be tuned easily by adjusting the composition of LPE growth solutions. A detailed description and general characteristics of these p-on-n layers can be found in our publication in Journal of Vacuum Science and Technology, B 9(3), May/June 1991,pp 1740-1745
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HgCdTe p-on-n heterostructure epilayers are detector grade materials suitable to be used for fabrication diodes and arrays in photovoltaic mode of operations. With a suitable passivation, mesa diodes can be delineated using the customer's own mask set. These are the layers currently being used at Fermionics to produce linear as well as mosaic arrays for tactical and surveillance infrared imaging applications. Examples of arrays being fabricated at Fermionics are given in the Custom Engineering Section of this brochure.
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Random sizes at least 2.2 x 2.4 cm² with usable area > 3 cm²
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| Substrate | CdTe |
| Substrate Thickness | Nominal 1mm |
| P-type Top Layer Thickness | Nominal 1 micron |
| N-type Active Layer Thickness | Nominal 25 micron |
| Active Layer Carrier Concentration | < 4 e 15 /cm³ |
| Cut-off Wavelength | Customer's Choice |
| 77°K RoA Product | Cut-off wavelength dependent |
| Quantum Efficiency | > 40% |