Room temperature 2.2 µm and 2.5 µm cutoff wavelength InGaAs photodiodes are optimized for use in infrared instrumentaton, remote sensing, and spectroscopy applications. Planar-passivated device structure.
| Cutoff Wavelength | 2.2 µm |
|---|---|
| Part Number | FD1000W2.2 |
| Active Diameter | 1 mm |
| Dark Current @ -1 V | 6 µA |
| Capacitance @ 0 V | 350 pF |
| Shunt Resistance | 25 KOhm |
| Responsivity (at peak) | 1.2 A/W |
| D* (cmHz½W-1) | 1 x 1011 |
| Standard Package | TO-18 header |