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The (Zn) CdTe substrate wafers are cut from boules grown by a modified Bridgman technique, specifically for use in growing vapor or liquid-phase HgCdTe epitaxial layers. The etch pits density is typically 1e5 /cm² , infrared transmission 60-65%. These are high quality substrate wafers used at Fermionics to produce high performance HgCdTe diodes and arrays.
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Square cut up to 2.5 x 2.5 cm²
Rectangular cut up to 2 x 3 cm²
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<111> ±0.5°
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<1.2mm as-cut
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The (Zn)CdTe boules of the size of 3.75cm diameter x 7.5cm long are also available from which a somewhat smaller single crystal grain can be extracted. The single crystals of (Zn)CdTe can be used to fabricate X-ray detectors, modulators and many other applications.
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